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triquint semiconductor: www. triquint.com (972)994-8465 fax (972)994-8504 info-mmw@tqs.com 1 TGC4403-SM mar 2007 ? rev - datasheet subject to change without notice. primary applications product description key features measured performance 8 - 15 ghz packaged doubler with amplifier 0 5 10 15 20 25 30 16 18 20 22 24 26 28 30 2x input frequency (ghz) pout at 2x input freq (dbm) pin = 2 dbm 0 10 20 30 40 50 60 8 12162024283236404448 frequency, ghz isolation (dbc) relative to output power at 2x input freq 1x input f 3x input f input power = +2dbm bias conditions: vd = 5 v, id = 150 ma, vdbl = -0.8 v, vg = -0.5 v typical the triquint TGC4403-SM packaged mmic combines a frequency doubler with a 3-stage amplifier, operating at input frequencies of 8 - 15 ghz. with greater than 30 dbc isolation between the input and doubled frequency, the TGC4403-SM achieves 20 dbm output power, with 2 dbm input power. this performance makes this doubler ideally suited for point to point radios and ka- band satellite ground terminal applications. the TGC4403-SM provides the frequency doubling function in an compact 4 mm x 4 mm package footprint. each device is 100% dc and rf tested on?wafer to ensure performance compliance. the device is available in chip form. the TGC4403-SM has a protective surface passivation layer on the mmic providing environmental robustness. lead-free and rohs compliant. ? rf output frequency range: 16-30 ghz ? input frequency range: 8 - 15 ghz ? 20 dbm nominal pout ? 18 db gain ? 30 dbc input frequency isolation ? bias: vd = 5 v, id = 150 ma, vdbl = -0.8 v, vg = -0.5 v typical ? package dimensions: 4 x 4 x 0.9 mm ? point-to-point radio ? ka band sat-com
triquint semiconductor: www. triquint.com (972)994-8465 fax (972)994-8504 info-mmw@tqs.com 2 TGC4403-SM mar 2007 ? rev - table ii recommended operating conditions table i absolute maximum ratings 1/ symbol parameter value notes vd-vg drain to gate voltage 12 v vd drain voltage 8 v 2/ vdbl doubler voltage range -5 to 0 v vg gate voltage range -5 to 0 v id positive current 280 ma 2/ ig gate current range -1 to 23 ma idbl doubler current range -0.6 to 16.8 ma pin input continuous wave power 18.2 dbm 2/ 1/ these ratings represent the maximum operable values for this device. stresses beyond those listed under ?absolute maximum ratings? may cause permanent damage to the device and / or affect device lifetime. these are stress ratings only, and functional operation of the device at these conditions is not implied. 2/ combinations of supply voltage, supply current, input power, and output power shall not exceed the maximum power dissipation listed in table iv. symbol parameter 1/ value vd drain voltage 5 v id drain current (quiescent) 150 ma id_drive drain current with rf input = 2 dbm 170 ma vg gate voltage -0.5 v vdbl doubler voltage -0.8 v 1/ see assembly diagram for bias instructions.
triquint semiconductor: www. triquint.com (972)994-8465 fax (972)994-8504 info-mmw@tqs.com 3 TGC4403-SM mar 2007 ? rev - table iii rf characterization table bias: vd = 5 v, id = 150 ma, vg = -0.5 v, vdbl = -0.8 v typical symbol parameter test conditions nominal units rf_freq input frequency range 8 - 15 ghz gain gain f = 16 - 30 ghz 18 db irl input return loss f = 16 - 30 ghz 3 db orl output return loss f = 16 - 30 ghz 6 db pout output power (rfin = 2 dbm) f = 16 - 30 ghz 20 dbm isol isolation f = 16 - 30 ghz 30 dbc
triquint semiconductor: www. triquint.com (972)994-8465 fax (972)994-8504 info-mmw@tqs.com 4 TGC4403-SM mar 2007 ? rev - table iv power dissipation and thermal properties power de-rating curve 1/ for a median life of 1e+6 hours, power dissipation is limited to pd(max) = (150 oc ? tbase oc)/ jc. 2/ channel operating temperature will directly affect the device median time to failure (mttf). for maximum life, it is recommended that channel temper atures be maintained at the lowest possible levels. parameter test conditions value notes maximum power dissipation tbaseplate = 70 oc pd = 1.42 w tchannel = 150 oc tm = 1.0e+6 hrs 1/ 2/ thermal resistance, jc vd = 5 v id = 150 ma pd = 0.75 w jc = 56.3 (oc/w) tchannel = 112 oc tm = 3.4e+7 hrs thermal resistance, jc under rf drive vd = 5 v id = 170 ma pout = 22 dbm pd = 0.69 w jc = 56.3 (oc/w) tchannel = 109 oc tm = 4.6e+7 hrs mounting temperature 30 seconds 320 oc storage temperature -65 to 150 oc 0 0.25 0.5 0.75 1 1.25 1.5 1.75 2 2.25 2.5 2.75 3 -50 -25 0 25 50 75 100 125 150 175 baseplate temp (c) power dissipated (w) tm= 1.0e+6 hrs
triquint semiconductor: www. triquint.com (972)994-8465 fax (972)994-8504 info-mmw@tqs.com 5 TGC4403-SM mar 2007 ? rev - measured data bias conditions: vd = 5 v, id = 150 ma , vg = -0.5 v, vdbl = -0.8 v typical 0 5 10 15 20 25 30 16 18 20 22 24 26 28 30 2x input frequency (ghz) pout at 2x input freq (dbm) pin = 2 dbm 0 10 20 30 40 50 60 8 12162024283236404448 frequency, ghz isolation (dbc) relative to output power at 2x input freq 1x input f 3x input f input power = +2dbm
triquint semiconductor: www. triquint.com (972)994-8465 fax (972)994-8504 info-mmw@tqs.com 6 TGC4403-SM mar 2007 ? rev - measured data measured data -30 -25 -20 -15 -10 -5 0 5 10 15 20 25 30 6 8 10 12 14 16 1x input frequency, ghz conversion gain (db) 2x input freq, pin = -1 dbm 2x input freq, pin = +2 dbm 2x input freq, pin = +5 dbm -60 -50 -40 -30 -20 -10 0 10 20 30 6 8 10 12 14 16 1x input frequency, ghz suppr ession (db) with respect to output power at 2x input freq 3x input freq, pin = +5 dbm 3x input freq, pin = +2 dbm 3x input freq, pin = -1 dbm 1x input freq, pin = +5 dbm 1x input freq, pin = +2 dbm 1x input freq, pin = -1 dbm bias conditions: vd = 5 v, id = 150 ma , vg = -0.5 v, vdbl = -0.8 v typical
triquint semiconductor: www. triquint.com (972)994-8465 fax (972)994-8504 info-mmw@tqs.com 7 TGC4403-SM mar 2007 ? rev - measured data -20 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 5 101520253035 frequency (ghz) input and output return loss (db) irl orl bias conditions: vd = 5 v, id = 150 ma , vg = -0.5 v, vdbl = -0.8 v typical
triquint semiconductor: www. triquint.com (972)994-8465 fax (972)994-8504 info-mmw@tqs.com 8 TGC4403-SM mar 2007 ? rev - package pinout pin description 1, 2, 4, 7, 8, 9, 11, 12, 13, 15, 16 n/c 3 rf input 5 vdbl 6 vg 10 rf out 14 vd 17 gnd pin #1 identification 1 2 3 4 56 7 8 12 11 10 9 13 14 15 16 17 pin #1 dot top view bottom view
triquint semiconductor: www. triquint.com (972)994-8465 fax (972)994-8504 info-mmw@tqs.com 9 TGC4403-SM mar 2007 ? rev - electrical schematic bias procedures doubler 2x buffer TGC4403-SM rf in rf out vd vg vdbl 100 pf bias-up procedure ? vg set to -1.5 v ? vd set to +5 v ? vdbl set to -0.8 v ? adjust vg more positive until id is 150 ma. this will be ~ vg = -0.5 v ? apply signal to input, id will increase bias-down procedure ? turn off signal ? reduce vg to -1.5v. ensure id ~ 0 ma ? turn vdbl to 0v ? turn vd to 0v ? turn vg to 0v 100 pf 1 uf 100 pf 1 uf 15 ? 1 uf 15 ? x 2
triquint semiconductor: www. triquint.com (972)994-8465 fax (972)994-8504 info-mmw@tqs.com 10 TGC4403-SM mar 2007 ? rev - gaas mmic devices are susceptible to damage from electrostatic discharge. pr oper precautions should be observed during handling, assembly and test. mechanical drawing units: millimeters thickness: 0.85 pkg x,y size tolerance: +/- 0.050
triquint semiconductor: www. triquint.com (972)994-8465 fax (972)994-8504 info-mmw@tqs.com 11 TGC4403-SM mar 2007 ? rev - gaas mmic devices are susceptible to damage from electrostatic discharge. pr oper precautions should be observed during handling, assembly and test. recommended assembly diagram part description c1,c2,c3 1 uf capacitor (0402) c4,c5,c6 100 pf capacitor (0402) r1,r2 15 ohm resistor (0402) c2 c3 c1 c6 c5 c4 r2 r1 c2 c3 c1 c6 c5 c4 r2 r1
triquint semiconductor: www. triquint.com (972)994-8465 fax (972)994-8504 info-mmw@tqs.com 12 TGC4403-SM mar 2007 ? rev - gaas mmic devices are susceptible to damage from electrostatic discharge. pr oper precautions should be observed during handling, assembly and test. assembly notes ordering information part package style TGC4403-SM qfn 4x4 surface mount recommended surface mount package assembly ? proper esd precautions must be followed while handling packages. ? clean the board with acetone. rinse with alcohol. allow the circuit to fully dry. ? triquint recommends using a conductive solder paste for attachment. follow solder paste and reflow oven vendors? recommendations when developing a solder reflow profile. typical solder reflow profiles are listed in the table below. ? hand soldering is not recommended. solder paste can be applied using a stencil printer or dot placement. the volume of solder paste depends on pcb and component layout and should be well controlled to ensure consistent mechanical and electrical performance. ? clean the assembly with alcohol. reflow profile snpb pb free ramp-up rate 3 c/sec 3 c/sec activation time and temperature 60 ? 120 sec @ 140 ? 160 c 60 ? 180 sec @ 150 ? 200 c time above melting point 60 ? 150 sec 60 ? 150 sec max peak temperature 240 c 260 c time within 5 c of peak temperature 10 ? 20 sec 10 ? 20 sec ramp-down rate 4 ? 6 c/sec 4 ? 6 c/sec typical solder reflow profiles

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